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Hofstetter, M. ; Howgate, J.* ; Sharp, I.D.* ; Funk, M. ; Stutzmann, M.* ; Paretzke, H.G. ; Thalhammer, S.

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices.

Appl. Phys. Lett. 96:092110 (2010)
DOI
Open Access Green möglich sobald Postprint bei der ZB eingereicht worden ist.
We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the mu Gy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.
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Publikationstyp Artikel: Journalartikel
Dokumenttyp Wissenschaftlicher Artikel
Korrespondenzautor
Schlagwörter Aluminium compounds; Biological techniques; Biomedical equipment; Chemical sensors; Dosimetry; Gallium compounds; High electron mobility transistors; III-V semiconductors; pH measurement; Wide band gap semiconductors; X-ray effects
ISSN (print) / ISBN 0003-6951
e-ISSN 1077-3118
Zeitschrift Applied Physics Letters
Quellenangaben Band: 96, Heft: 9, Seiten: , Artikelnummer: 092110 Supplement: ,
Verlag American Institute of Physics (AIP)
Nichtpatentliteratur Publikationen
Begutachtungsstatus Peer reviewed
Institut(e) Institute of Radiation Protection (ISS)