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On the mechanism of cluster emission in sputtering.
Phys. Lett. A 69, 322-325 (1979)
The intensity and the energy distribution of Si+ n cluster ions emitted from clean silicon have been measured for different target orientations as a function of the primary ion energy (3-30 keV) and the projectile mass (noble gas ion bombardment). The results favour the idea that clusters are emitted as such rather than being produced by vacuum recombination of individually emitted atoms and ions.
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Publikationstyp
Artikel: Journalartikel
Dokumenttyp
Wissenschaftlicher Artikel
ISSN (print) / ISBN
0375-9601
e-ISSN
1873-2429
Zeitschrift
Physics Letters A
Quellenangaben
Band: 69,
Heft: 5,
Seiten: 322-325
Verlag
Elsevier
Nichtpatentliteratur
Publikationen
Begutachtungsstatus
Peer reviewed