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Kim, H.* ; Woda, C. ; Discher, M.*

OSL at elevated temperature of smart chip cards for retrospective dosimetry.

Radiat. Phys. Chem. 217:111520 (2024)
DOI
Open Access Green möglich sobald Postprint bei der ZB eingereicht worden ist.
Smart chip cards are a promising material in retrospective dosimetry due to their high collectability with low replacement cost. In this study, dose reconstruction using OSL at elevated temperatures for various chip cards was investigated. The approximate spectral emission of the chip cards was determined through a comparison of radiation-induced and intrinsic background TL signals using different detection filters. In the OSL decay curve, a fast component (0.0–0.4 s) was integrated to avoid high intrinsic background signals. To minimize sensitivity changes due to heat treatment, a protocol to measure OSL at 100 °C was developed and the data were compared with those from a similar protocol for OSL measured at room temperature. In the 0.1 - 5 Gy range, linear and power functions were fitted for room temperature and 100 °C OSL protocols, respectively. The minimum detectable dose was evaluated immediately after exposure, with values of 25 mGy for room temperature and 240 mGy for 100 °C OSL being determined. Signal fading was measured up to 30 days after irradiation for the investigated protocols. A dose recovery test was made 10 days after irradiation using various chip cards, and the 100 °C OSL protocol produced more reliable results than the room temperature OSL protocol. As a result, the study emphasizes the necessity of further investigation of OSL at high temperatures using chip cards.
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Publikationstyp Artikel: Journalartikel
Dokumenttyp Wissenschaftlicher Artikel
Korrespondenzautor
Schlagwörter Dose Recovery Test ; Osl At Elevated Temperature ; Retrospective Dosimetry ; Smart Chip Card; Optically Stimulated Luminescence; Electronic Components; Mobile Phones; Thermoluminescence; Dependence
ISSN (print) / ISBN 0969-806X
e-ISSN 1879-0895
Zeitschrift Radiation Physics and Chemistry
Quellenangaben Band: 217, Heft: , Seiten: , Artikelnummer: 111520 Supplement: ,
Verlag Elsevier
Verlagsort The Boulevard, Langford Lane, Kidlington, Oxford Ox5 1gb, England
Nichtpatentliteratur Publikationen
Begutachtungsstatus Peer reviewed
Institut(e) Institute of Radiation Medicine (IRM)
Förderungen EURADOS young scientist grant (2019)
Korea Atomic Energy Research Institute
National Research Foundation of Korea (NRF) - Korean government (Ministry of Science and ICT)