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Open Access Green möglich sobald Postprint bei der ZB eingereicht worden ist.
In situ observation of gas reemission and blister rupture during helium implantation in silicon.
Appl. Phys. Lett. 52, 1836-1841 (2009)
Gas phase ionization mass spectrometry is shown to provide means for exploring the processes that control the retention of 10 keV He+ implanted in Si at 45°. Blistering, observed in situ, was preceded by a long period of bombardment (70% of the critical fluence for blistering) during which implanted He was released at a rather high rate (~33% of the incident He flux). Assisted by the stress due to the growing bubbles, bombardment induced detrapping allows a large fraction of the implanted He atoms to migrate to the nearby surface and escape into vacuum.
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Publikationstyp
Artikel: Journalartikel
Dokumenttyp
Wissenschaftlicher Artikel
Schlagwörter
bubbles; elemental semiconductors; fracture; helium; ion implantation; mass spectroscopy; silicon
ISSN (print) / ISBN
0003-6951
e-ISSN
1077-3118
Zeitschrift
Applied Physics Letters
Quellenangaben
Band: 52,
Heft: 5,
Seiten: 1836-1841
Verlag
American Institute of Physics (AIP)
Nichtpatentliteratur
Publikationen
Begutachtungsstatus
Peer reviewed
Institut(e)
Institute of Radiation Protection (ISS)