PuSH - Publikationsserver des Helmholtz Zentrums München

Becker, J. ; Fedrigo, M.*

Introducing the concept of potential-based organ contours.

IEEE TRPMS 3, 24-30 (2018)
Postprint DOI
Open Access Green
The aim of the paper is to explore a new method for organ contour description in radiology and radiation protection. The method bases on the mathematical computation of electrical fields, exploited are the equipotential lines caused by a potential field of a distribution of point sources in analogy to electric charges. The organ shape is described by the potential values of the field, the contour by the equipotentials. The potential-dependent methods offers an inside-outside criterion and can be scaled in size and edited by changing the source points. Because of that it offers a flexible possible framework for organ contour editing and also towards segmentation. The main focus of the paper is the proof of principle, i.e. the optimization of the source point coordinates and source strengths, to show the transfer of voxelized organ borders to potential based contours. The already voxelized organ borders were from a human voxel phantom generated from 2-dimensional CT images of a real patient. Results for several closed and compact organs shall be presented and the limitations, future applications and possibilities addressed, e.g. the advantages of an implementation in Monte Carlo calculations of radiation transport.
Altmetric
Weitere Metriken?
[➜Einloggen]
Zusatzinfos bearbeiten [➜Einloggen]
Publikationstyp Artikel: Journalartikel
Dokumenttyp Wissenschaftlicher Artikel
Korrespondenzautor
Schlagwörter Electric potential , Shape , Biological systems , Plasmas , Biomedical imaging , Mathematical model , Numerical models; Organ modeling , potential-based contour , equipotential contour.
ISSN (print) / ISBN 2469-7311
e-ISSN 2469-7311
Zeitschrift IEEE transactions on radiation and plasma medical sciences
Quellenangaben Band: 3, Heft: 1, Seiten: 24-30 Artikelnummer: , Supplement: ,
Verlag Institute of Electrical and Electronics Engineers (IEEE)
Verlagsort New York, NY
Nichtpatentliteratur Publikationen
Begutachtungsstatus Peer reviewed
Institut(e) Institute of Radiation Protection (ISS)