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Hofstetter, M. ; Howgate, J.* ; Sharp, I.D.* ; Funk, M. ; Stutzmann, M.* ; Paretzke, H.G. ; Thalhammer, S.

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices.

Appl. Phys. Lett. 96:092110 (2010)
DOI
Open Access Green as soon as Postprint is submitted to ZB.
We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the mu Gy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.
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Publication type Article: Journal article
Document type Scientific Article
Corresponding Author
Keywords Aluminium compounds; Biological techniques; Biomedical equipment; Chemical sensors; Dosimetry; Gallium compounds; High electron mobility transistors; III-V semiconductors; pH measurement; Wide band gap semiconductors; X-ray effects
ISSN (print) / ISBN 0003-6951
e-ISSN 1077-3118
Journal Applied Physics Letters
Quellenangaben Volume: 96, Issue: 9, Pages: , Article Number: 092110 Supplement: ,
Publisher American Institute of Physics (AIP)
Non-patent literature Publications
Reviewing status Peer reviewed
Institute(s) Institute of Radiation Protection (ISS)