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Open Access Green as soon as Postprint is submitted to ZB.
On the mechanism of cluster emission in sputtering.
Phys. Lett. A 69, 322-325 (1979)
The intensity and the energy distribution of Si+ n cluster ions emitted from clean silicon have been measured for different target orientations as a function of the primary ion energy (3-30 keV) and the projectile mass (noble gas ion bombardment). The results favour the idea that clusters are emitted as such rather than being produced by vacuum recombination of individually emitted atoms and ions.
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Publication type
Article: Journal article
Document type
Scientific Article
ISSN (print) / ISBN
0375-9601
e-ISSN
1873-2429
Journal
Physics Letters A
Quellenangaben
Volume: 69,
Issue: 5,
Pages: 322-325
Publisher
Elsevier
Non-patent literature
Publications
Reviewing status
Peer reviewed