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Significantly extended analytical potential of Rutherford backscattering spectrometry by in situ combination with low-energy sputtering.

Appl. Phys. Lett. 53, 1708-1710 (1988)
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We have assembled a dual-beam system which allows solid samples to be analyzed by Rutherford backscattering spectrometry (RBS) at deliberately chosen stages of in situ sputter etching by low-energy ion bombardment. Using the novel setup we demonstrate that, for a large variety of samples, the analytical potential of conventional RBS can be extended remarkably. Apart from the obvious possibility of increasing the accessible depth of analysis, three specific advantages are illustrated: (i) removal of the interference between the signals due to buried dopants and a (low-mass) substrate, (ii) decoupling of the mass and the energy scale, and (iii) high-resolution depth analysis of deep-lying structures (glancing angle RBS) with the ability to circumvent the problems usually associated with sputter-related mixing effects.
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Publication type Article: Journal article
Document type Scientific Article
Language english
Publication Year 1988
HGF-reported in Year 0
ISSN (print) / ISBN 0003-6951
e-ISSN 1077-3118
Quellenangaben Volume: 53, Issue: 18, Pages: 1708-1710 Article Number: , Supplement: ,
Publisher American Institute of Physics (AIP)
Reviewing status Peer reviewed
Scopus ID 0042479746
Erfassungsdatum 1988-12-31