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Significantly extended analytical potential of Rutherford backscattering spectrometry by in situ combination with low-energy sputtering.
Appl. Phys. Lett. 53, 1708-1710 (1988)
Publ. Version/Full Text
DOI
We have assembled a dual-beam system which allows solid samples to be analyzed by Rutherford backscattering spectrometry (RBS) at deliberately chosen stages of in situ sputter etching by low-energy ion bombardment. Using the novel setup we demonstrate that, for a large variety of samples, the analytical potential of conventional RBS can be extended remarkably. Apart from the obvious possibility of increasing the accessible depth of analysis, three specific advantages are illustrated: (i) removal of the interference between the signals due to buried dopants and a (low-mass) substrate, (ii) decoupling of the mass and the energy scale, and (iii) high-resolution depth analysis of deep-lying structures (glancing angle RBS) with the ability to circumvent the problems usually associated with sputter-related mixing effects.
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Publication type
Article: Journal article
Document type
Scientific Article
ISSN (print) / ISBN
0003-6951
e-ISSN
1077-3118
Journal
Applied Physics Letters
Quellenangaben
Volume: 53,
Issue: 18,
Pages: 1708-1710
Publisher
American Institute of Physics (AIP)
Non-patent literature
Publications
Reviewing status
Peer reviewed
Institute(s)
Institute of Radiation Protection (ISS)