Home
Deutsch
Advanced Search
Browse by ...
Publication overview
Contact persons
Help
In stock of library
DOI
 |
|
Open Access Green as soon as Postprint is submitted to ZB.
Radiation-enhanced outdiffusion of xenon implanted in aluminum.
Appl. Phys. Lett. 31, 21-23 (1977)
Entrapment of 10-160-keV xenon implanted under UHV conditions in polycrystalline aluminum has been investigated by Rutherford backscattering. The saturation xenon distributions were found to be strongly affected by radiation-enhanced outdiffusion. Different from silicon the loss of xenon from near-surface regions of aluminum increases with increasing ion energy. The results are explained in terms of spike-activated diffusion.
Altmetric
Additional Metrics?
Edit extra informations
Login
Publication type
Article: Journal article
Document type
Scientific Article
ISSN (print) / ISBN
0003-6951
e-ISSN
1077-3118
Journal
Applied Physics Letters
Quellenangaben
Volume: 31,
Issue: 1,
Pages: 21-23
Publisher
American Institute of Physics (AIP)
Non-patent literature
Publications
Reviewing status
Peer reviewed
Institute(s)
Physikalisch-Technische Abteilung