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Open Access Green as soon as Postprint is submitted to ZB.
Determination of implantation profiles in solids by secondary ion mass spectrometry.
Phys. Lett. A 41, 177-178 (1972)
Secondary ion mass spectrometry has been applied to a determination of theprofile of 22 keV boron implanted in amorphous silicon. A Gaussian range distribution is observed with a projected range of 840 Å and a standard deviation of 340 Å.
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Publication type
Article: Journal article
Document type
Scientific Article
ISSN (print) / ISBN
0375-9601
e-ISSN
1873-2429
Journal
Physics Letters A
Quellenangaben
Volume: 41,
Issue: 2,
Pages: 177-178
Publisher
Elsevier
Non-patent literature
Publications
Reviewing status
Peer reviewed
Institute(s)
Physikalisch-Technische Abteilung