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Open Access Green as soon as Postprint is submitted to ZB.
Range parameter distortion in heavy ion implantation.
Phys. Lett. A 54, 33-34 (1975)
20 to 145 keV xenon range profiles in silicon have been determined as a function of the implantation fluence. Shortening of the most probable projected range and increase in range straggling were observed at fluences usually implanted for range measurements by means of the back-scattering technique.
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Publication type
Article: Journal article
Document type
Scientific Article
ISSN (print) / ISBN
0375-9601
e-ISSN
1873-2429
Journal
Physics Letters A
Quellenangaben
Volume: 54,
Issue: 1,
Pages: 33-34
Publisher
Elsevier
Non-patent literature
Publications
Reviewing status
Peer reviewed
Institute(s)
Physikalisch-Technische Abteilung