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Non-Gaussian range profiles in amorphous solids.

Phys. Lett. A 43, 477-478 (1973)
DOI
Open Access Green as soon as Postprint is submitted to ZB.
Range profiles of boron in amorphous silicon exhibit pronounced deviations from Gaussian at energies above about 40 keV due to increasing electronic stopping. A detailed comparison with computed profiles allows a semiempirical determination of the electronic stopping cross section (Se ≈ E0.4).
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Publication type Article: Journal article
Document type Scientific Article
Corresponding Author
ISSN (print) / ISBN 0375-9601
e-ISSN 1873-2429
Quellenangaben Volume: 43, Issue: 6, Pages: 477-478 Article Number: , Supplement: ,
Publisher Elsevier
Non-patent literature Publications
Reviewing status Peer reviewed
Institute(s) Physikalisch-Technische Abteilung