PuSH - Publication Server of Helmholtz Zentrum München

Export: TXT Text RIS Endnote (RIS) BIB BibTeX
Wittmaack, K.

Ionization mechanism of H+ sputtered from hydrogenated silicon.

Phys. Rev. Lett. 43, 872-875 (1979)
DOI
Open Access Green as soon as Postprint is submitted to ZB.
The emission of H+ sputtered from hydrogenated amorphous silicon has been studied for 3- to 30-keV noble-gas-ion bombardment. The results suggest that excited silicon atoms can be emitted as (Si2pH)+ molecules. Auger deexcitation in vacuum results in (SiH)2+ which disintegrates into Si+ and H+ with a corresponding gain in kinetic energy due to Coulomb explosion. Direct emission of H+ is important only at H+ energies > 30 eV or at bombardment energies <3 keV.
Impact Factor
Scopus SNIP
Scopus
Cited By
Altmetric
0.000
0.000
28
Tags
Annotations
Special Publikation
Hide on homepage

Edit extra information
Edit own tags
Private
Edit own annotation
Private
Hide on publication lists
on hompage
Mark as special
publikation
Publication type Article: Journal article
Document type Scientific Article
Language english
Publication Year 1979
HGF-reported in Year 0
ISSN (print) / ISBN 0031-9007
e-ISSN 1079-7114
Journal Physical Review Letters
Quellenangaben Volume: 43, Issue: 12, Pages: 872-875 Article Number: , Supplement: ,
Publisher American Physical Society (APS)
Reviewing status Peer reviewed
Institute(s) Physikalisch-Technische Abteilung
DOI 10.1103/PhysRevLett.43.872
Scopus ID 4243936906
Erfassungsdatum 1979-12-31
[➜Report correction]