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Open Access Green as soon as Postprint is submitted to ZB.
Ionization mechanism of H+ sputtered from hydrogenated silicon.
Phys. Rev. Lett. 43, 872-875 (1979)
The emission of H+ sputtered from hydrogenated amorphous silicon has been studied for 3- to 30-keV noble-gas-ion bombardment. The results suggest that excited silicon atoms can be emitted as (Si2pH)+ molecules. Auger deexcitation in vacuum results in (SiH)2+ which disintegrates into Si+ and H+ with a corresponding gain in kinetic energy due to Coulomb explosion. Direct emission of H+ is important only at H+ energies > 30 eV or at bombardment energies <3 keV.
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Publication type
Article: Journal article
Document type
Scientific Article
ISSN (print) / ISBN
0031-9007
e-ISSN
1079-7114
Journal
Physical Review Letters
Quellenangaben
Volume: 43,
Issue: 12,
Pages: 872-875
Publisher
American Physical Society (APS)
Non-patent literature
Publications
Reviewing status
Peer reviewed
Institute(s)
Physikalisch-Technische Abteilung