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    High mobility AlGaN/GaN devices for β--dosimetry.
        
        Nucl. Instrum. Methods Phys. Res. Sect. A 819, 14-19 (2016)
    
    
    
	    There is a high demand in modern medical applications for dosimetry sensors with a small footprint allowing for unobtrusive or high spatial resolution detectors. To this end we characterize the sensoric response of radiation resistant high mobility AlGaN/GaN semiconductor devices when exposed to β--emitters. The samples were operated as a floating gate transistor, without a field effect gate electrode, thus excluding any spurious effects from β--particle interactions with a metallic surface covering. We demonstrate that the source-drain current is modulated in dependence on the kinetic energy of the incident β--particles. Here, the signal is shown to have a linear dependence on the absorbed energy calculated from Monte Carlo simulations. Additionally, a stable and reproducible sensor performance as a β--dose monitor is shown for individual radioisotopes. Our experimental findings and the characteristics of the AlGaN/GaN high mobility layered devices indicate their potential for future applications where small sensor size is necessary, like for instance brachytherapy.
	
	
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        Publication type
        Article: Journal article
    
 
    
        Document type
        Scientific Article
    
 
     
    
    
        Keywords
        Gan ; Monte Carlo Simulations ; Radiation Detectors ; β-emitters; Persistent Photoconductivity; Algan/gan Heterostructure; Gallium Nitride; Radiation; Gan; Dosimetry; Brachytherapy; Detectors; Hfets
    
 
     
    
    
        Language
        english
    
 
    
        Publication Year
        2016
    
 
     
    
        HGF-reported in Year
        2016
    
 
    
    
        ISSN (print) / ISBN
        0168-9002
    
 
    
        e-ISSN
        1872-9576
    
 
    
     
     
	     
	 
	 
     
	
    
        Quellenangaben
        
	    Volume: 819,  
	    
	    Pages: 14-19 
	    
	    
	
    
 
    
         
        
            Publisher
            Elsevier
        
 
        
            Publishing Place
            Amsterdam
        
 
	
         
         
         
         
         
	
         
         
         
    
         
         
         
         
         
         
         
    
        Reviewing status
        Peer reviewed
    
 
    
        Institute(s)
        Institute of Radiation Protection (ISS)
    
 
    
        POF-Topic(s)
        30504 - Mechanisms of Genetic and Environmental Influences on Health and Disease
    
 
    
        Research field(s)
        Radiation Sciences
    
 
    
        PSP Element(s)
        G-501100-006
    
 
     
     	
    
    
        WOS ID
        WOS:000372318800003
    
    
        Scopus ID
        84959501537
    
    
        Erfassungsdatum
        2016-03-15