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Open Access Green as soon as Postprint is submitted to ZB.
In situ observation of gas reemission and blister rupture during helium implantation in silicon.
Appl. Phys. Lett. 52, 1836-1841 (2009)
Gas phase ionization mass spectrometry is shown to provide means for exploring the processes that control the retention of 10 keV He+ implanted in Si at 45°. Blistering, observed in situ, was preceded by a long period of bombardment (70% of the critical fluence for blistering) during which implanted He was released at a rather high rate (~33% of the incident He flux). Assisted by the stress due to the growing bubbles, bombardment induced detrapping allows a large fraction of the implanted He atoms to migrate to the nearby surface and escape into vacuum.
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Publication type
Article: Journal article
Document type
Scientific Article
Keywords
bubbles; elemental semiconductors; fracture; helium; ion implantation; mass spectroscopy; silicon
ISSN (print) / ISBN
0003-6951
e-ISSN
1077-3118
Journal
Applied Physics Letters
Quellenangaben
Volume: 52,
Issue: 5,
Pages: 1836-1841
Publisher
American Institute of Physics (AIP)
Non-patent literature
Publications
Reviewing status
Peer reviewed
Institute(s)
Institute of Radiation Protection (ISS)