PuSH - Publication Server of Helmholtz Zentrum München: In situ observation of gas reemission and blister rupture during helium implantation in silicon.

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Wittmaack, K.

In situ observation of gas reemission and blister rupture during helium implantation in silicon.

Appl. Phys. Lett. 52, 1836-1841 (2009)

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Open Access Green as soon as Postprint is submitted to ZB.

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Gas phase ionization mass spectrometry is shown to provide means for exploring the processes that control the retention of 10 keV He+ implanted in Si at 45°. Blistering, observed in situ, was preceded by a long period of bombardment (70% of the critical fluence for blistering) during which implanted He was released at a rather high rate (~33% of the incident He flux). Assisted by the stress due to the growing bubbles, bombardment induced detrapping allows a large fraction of the implanted He atoms to migrate to the nearby surface and escape into vacuum.

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