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Open Access Green möglich sobald Postprint bei der ZB eingereicht worden ist.
Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices.
Appl. Phys. Lett. 96:092110 (2010)
We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the mu Gy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.
Impact Factor
Scopus SNIP
Web of Science
Times Cited
Times Cited
Scopus
Cited By
Cited By
Altmetric
3.554
1.620
5
8
Anmerkungen
Besondere Publikation
Auf Hompepage verbergern
Publikationstyp
Artikel: Journalartikel
Dokumenttyp
Wissenschaftlicher Artikel
Schlagwörter
Aluminium compounds; Biological techniques; Biomedical equipment; Chemical sensors; Dosimetry; Gallium compounds; High electron mobility transistors; III-V semiconductors; pH measurement; Wide band gap semiconductors; X-ray effects
Sprache
Veröffentlichungsjahr
2010
HGF-Berichtsjahr
2010
ISSN (print) / ISBN
0003-6951
e-ISSN
1077-3118
Zeitschrift
Applied Physics Letters
Quellenangaben
Band: 96,
Heft: 9,
Artikelnummer: 092110
Verlag
American Institute of Physics (AIP)
Begutachtungsstatus
Peer reviewed
Institut(e)
Institute of Radiation Protection (ISS)
POF Topic(s)
30504 - Mechanisms of Genetic and Environmental Influences on Health and Disease
Forschungsfeld(er)
Radiation Sciences
PSP-Element(e)
G-501100-006
Scopus ID
77949407097
Erfassungsdatum
2010-11-26