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Novel model of negative secondary ion formation and its use to refine the electronegativity of almost fifty elements.
Anal. Chem. 86, 5962-5968 (2014)
This study aimed to examine the recently proposed idea that the ionic contribution to atomic bonds is essential in determining the charge state of sputtered atoms. Use was made of negative secondary ion yields reported by Wilson for a large number of elements implanted in silicon and then sputter profiled by Cs bombardment. The derived normalized ion yields (or fractions) P vary by 6 orders of magnitude, but the expected exponential dependence on the electron affinity EA is evident only vaguely. Remarkably, a correlation of similar quality is observed if the data are presented as a function of the ionization potential IP. With IP being the dominant (if not sole) contributor to the electronegativity π, one is led to assume that P depends on the sum π + EA. About 72% of the "nonsaturated" ion yields are in accordance with a dependence of the form P ∝ exp[(π + EA)/ε], with ε ≃ 0.2 eV, provided the appropriate value of π is selected from the electronegativity tables of Pauling (read in eV), Mulliken or Allen. However, each of the three sources contributes only about one-third to the favorable electronegativity data. This unsatisfactory situation initiated the idea to derive the "true" electronegativity πSIMS from the measured ion yields P(π + EA), verified for 48 elements. Significant negative deviations of πSIMS from a smooth increase with increasing atomic number are evident for elements with special outer-shell electron configurations such as (n-1)dg-1ns1 or (n-1)d 10ns2np1. The results strongly support the new model of secondary ion formation and provide means for refining electronegativity data.
Impact Factor
Scopus SNIP
Web of Science
Times Cited
Times Cited
Scopus
Cited By
Cited By
Altmetric
5.825
1.705
7
6
Anmerkungen
Besondere Publikation
Auf Hompepage verbergern
Publikationstyp
Artikel: Journalartikel
Dokumenttyp
Wissenschaftlicher Artikel
Schlagwörter
Relative Sensitivity Factors; Electron-affinities; Energy; Emission; Si; Systematics; Oxygen; Atoms; Gaas
Sprache
englisch
Veröffentlichungsjahr
2014
HGF-Berichtsjahr
2014
ISSN (print) / ISBN
0003-2700
e-ISSN
1520-6882
Zeitschrift
Analytical Chemistry
Quellenangaben
Band: 86,
Heft: 12,
Seiten: 5962-5968
Verlag
American Chemical Society (ACS)
Verlagsort
Washington
Begutachtungsstatus
Peer reviewed
Institut(e)
Institute of Radiation Protection (ISS)
POF Topic(s)
30504 - Mechanisms of Genetic and Environmental Influences on Health and Disease
Forschungsfeld(er)
Radiation Sciences
PSP-Element(e)
G-501100-006
WOS ID
WOS:000337643500053
Scopus ID
84902808719
Erfassungsdatum
2014-07-06