Open Access Green möglich sobald Postprint bei der ZB eingereicht worden ist.
Development and evaluation of gallium nitride-based thin films for X-ray dosimetry.
Phys. Med. Biol. 56, 3215-3231 (2011)
X-ray radiation plays an important role in medical procedures ranging from diagnostics to therapeutics. Due to the harm such ionizing radiation can cause, it has become common practice to closely monitor the dosages received by patients. To this end, precise online dosimeters have been developed with the dual objectives of monitoring radiation in the region of interest and improving therapeutic methods. In this work, we evaluate GaN thin film high electron mobility heterostructures with sub-mm(2) detection areas as x-ray radiation detectors. Devices were tested using 40-300 kV Bremsstrahlung x-ray sources. We find that the photoconductive device response exhibits a large gain, is almost independent of the angle of irradiation, and is constant to within 2% of the signal throughout this medical diagnostic x-ray range, indicating that these sensors do not require recalibration for geometry or energy. Furthermore, the devices show a high sensitivity to x-ray intensity and can measure in the air kerma rate (free-in-air) range of 1 µGy s(-1) to 10 mGy s(-1) with a signal stability of ±1% and a linear total dose response over time. Medical conditions were simulated by measurements of device responses to irradiation through human torso phantoms. Direct x-ray imaging is demonstrated using the index finger and wrist sections of a human phantom. The results presented here indicate that GaN-based thin film devices exhibit a wide range of properties, which make them promising candidates for dosimetry applications. In addition, with potential detection volumes smaller than 10(-6) cm(3), they are well suited for high-resolution x-ray imaging. Moreover, with additional engineering steps, these devices can be adapted to potentially provide both in vivo biosensing and x-ray dosimetry.
Impact Factor
Scopus SNIP
Web of Science
Times Cited
Times Cited
Scopus
Cited By
Cited By
Altmetric
3.057
1.799
4
6
Anmerkungen
Besondere Publikation
Auf Hompepage verbergern
Publikationstyp
Artikel: Journalartikel
Dokumenttyp
Wissenschaftlicher Artikel
Schlagwörter
Field-effect transistors; Molecular-beam epitaxy; Radiation-dosimetry; Detectors; Gan
Sprache
Veröffentlichungsjahr
2011
HGF-Berichtsjahr
2011
ISSN (print) / ISBN
0031-9155
e-ISSN
1361-6560
Zeitschrift
Physics in Medicine and Biology
Quellenangaben
Band: 56,
Heft: 11,
Seiten: 3215-3231
Verlag
Institute of Physics Publishing (IOP)
Verlagsort
Bristol
Begutachtungsstatus
Peer reviewed
Institut(e)
Institute of Radiation Protection (ISS)
POF Topic(s)
30504 - Mechanisms of Genetic and Environmental Influences on Health and Disease
Forschungsfeld(er)
Radiation Sciences
PSP-Element(e)
G-501100-006
PubMed ID
21540491
Scopus ID
79956085078
Erfassungsdatum
2011-07-26