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Significantly extended analytical potential of Rutherford backscattering spectrometry by in situ combination with low-energy sputtering.

Appl. Phys. Lett. 53, 1708-1710 (1988)
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We have assembled a dual-beam system which allows solid samples to be analyzed by Rutherford backscattering spectrometry (RBS) at deliberately chosen stages of in situ sputter etching by low-energy ion bombardment. Using the novel setup we demonstrate that, for a large variety of samples, the analytical potential of conventional RBS can be extended remarkably. Apart from the obvious possibility of increasing the accessible depth of analysis, three specific advantages are illustrated: (i) removal of the interference between the signals due to buried dopants and a (low-mass) substrate, (ii) decoupling of the mass and the energy scale, and (iii) high-resolution depth analysis of deep-lying structures (glancing angle RBS) with the ability to circumvent the problems usually associated with sputter-related mixing effects.
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Publikationstyp Artikel: Journalartikel
Dokumenttyp Wissenschaftlicher Artikel
Sprache englisch
Veröffentlichungsjahr 1988
HGF-Berichtsjahr 0
ISSN (print) / ISBN 0003-6951
e-ISSN 1077-3118
Quellenangaben Band: 53, Heft: 18, Seiten: 1708-1710 Artikelnummer: , Supplement: ,
Verlag American Institute of Physics (AIP)
Begutachtungsstatus Peer reviewed
Scopus ID 0042479746
Erfassungsdatum 1988-12-31